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Jiangxi Sanxin Hi-Tech Ceramics Co., Ltd.
AlN Substrate
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Introduction of AlN Substrate

We produce aluminum nitride substrate with excellent thermal, mechanical and electrical properties, thermal conductivity more than 170W/(m.K), dielectric constant around 8 at 1MHz, thermal expansion coefficient 4.5x10-6/℃, volume resistivity more than 10EE12 Ω.m, density 3.26g/cm3. With the rapid development of microelectronic devices, high thermal conductivity AlN substrates can be widely used in communications devices, high brightness LED, power electronics and other industries. It is thus an excellent electronic ceramic material.

Specifications of AlN Substrate

Property

Value

Model

LDN200

LDN170

LDN090

Size

(inch x inch)

2x2

4.5x4.5

6x6

5.5x7.5

(mm x mm)

50.8x50.8

114.3x114.3

152.4x152.4

139.7x190.5

Thickness (mm)

0.385

0.635

1.0

1.2

Color

Greyish white

Greyish white

White

Density (g/cm3)

3.33-3.36

3.30-3.35

3.26-3.28

Thermal conductivity (@25℃, W/(m-K))

>190

170-190

90-100

Volume resistivity (Ω.cm)

>1014

>1014

>1014

Dielectric constant (1MHz)

<9.3

<9.3

<9.3

Dielectric loss

0.001

0.001

0.001

Coefficient of thermal expansion( /℃, 20-300℃)

4.5×10-6

4.5×10-6

4.5×10-6

Flexual strength(MPa)

>330

>300

>250

Note: special order can be customized.

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